US 11,721,543 B2
Planarizing process and composition
Raj Sakamuri, Sharon, MA (US); Ognian Dimov, Warwick, RI (US); Sanjay Malik, Attleboro, MA (US); Michaela Connell, Cumberland, RI (US); Ahmad A. Naiini, East Greenwich, RI (US); and Stephanie Dilocker, Attleboro, MA (US)
Assigned to Fujifilm Electronic Materials U.S.A., Inc., N. Kingstown, RI (US)
Filed by Fujifilm Electronic Materials U.S.A., Inc., N. Kingstown, RI (US)
Filed on Oct. 1, 2020, as Appl. No. 17/60,445.
Claims priority of provisional application 62/910,766, filed on Oct. 4, 2019.
Prior Publication US 2021/0104398 A1, Apr. 8, 2021
Int. Cl. H01L 21/02 (2006.01); C08L 79/08 (2006.01); H01L 33/54 (2010.01); H01L 31/048 (2014.01); H01L 23/29 (2006.01)
CPC H01L 21/02109 (2013.01) [C08L 79/08 (2013.01); H01L 23/293 (2013.01); H01L 31/0481 (2013.01); H01L 33/54 (2013.01); C08L 2203/16 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A process of generating a polyimide based dielectric film on a substrate with conducting metal pattern, comprising:
providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer, at least one cross-linker, and at least one solvent, wherein the at least one cross-linker contains a metal-containing (meth)acrylate; and
depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.