US 11,721,541 B2
Semiconductor arrangement formation
Ting-Jui Chen, Hsinchu (TW); Chen Chih-Fen, Taoyuan (TW); Jason Yu, Hsinchu (TW); Tung-Hsi Hsieh, Hsinchu (TW); and Jiang-He Xie, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Mar. 3, 2021, as Appl. No. 17/190,577.
Prior Publication US 2022/0285148 A1, Sep. 8, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/027 (2006.01); H01L 21/22 (2006.01)
CPC H01L 21/02057 (2013.01) [H01L 21/0273 (2013.01); H01L 21/22 (2013.01); H01L 21/76224 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor arrangement, comprising:
forming a patterned photoresist over a top surface of a substrate;
doping a first portion of the substrate using the patterned photoresist;
removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist;
cleaning the top surface of the substrate;
etching the top surface of the substrate to remove negative oxides after cleaning the top surface of the substrate; and
treating the substrate with nitrous oxide to remove the fluoride residue after etching the top surface of the substrate to remove the negative oxides.