US 11,721,531 B2
Plasma processing apparatus
Ryo Sasaki, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on May 27, 2022, as Appl. No. 17/826,483.
Application 17/826,483 is a continuation of application No. 17/036,558, filed on Sep. 29, 2020, granted, now 11,380,527.
Claims priority of application No. 2019-182194 (JP), filed on Oct. 2, 2019; and application No. 2020-144810 (JP), filed on Aug. 28, 2020.
Prior Publication US 2022/0285137 A1, Sep. 8, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/683 (2006.01)
CPC H01J 37/32642 (2013.01) [H01J 37/32183 (2013.01); H01L 21/6833 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber, the substrate support including a base and an electrostatic chuck disposed on the base;
at least one insulating ring disposed so as to surround the substrate support;
an inner conductive ring disposed on the electrostatic chuck and the at least one insulating ring so as to surround a substrate on the electrostatic chuck, the inner conductive ring having an outer side surface;
an outer conductive ring disposed on the at least one insulating ring so as to surround the inner conductive ring without contacting the inner conductive ring, the outer conductive ring having an inner side surface facing the outer side surface of the inner conductive ring;
a radio frequency power supply electrically coupled to the substrate support.