| CPC H01J 37/32091 (2013.01) [H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01)] | 15 Claims |
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1. A capacitively-coupled plasma processing apparatus comprising:
a chamber having at least one gas inlet and at least one gas outlet;
a substrate support including a lower electrode and disposed in the chamber;
an upper electrode disposed above the substrate support and made of a silicon-containing material;
a first radio-frequency generator electrically connected to the upper electrode or the lower electrode and configured to generate a first radio-frequency power;
a second radio-frequency generator electrically connected to the lower electrode and configured to generate a second radio-frequency power having a frequency lower than a frequency of the first radio-frequency power;
an upper bias generator electrically connected to the upper electrode and configured to generate a bias signal, the bias signal being a direct current signal or an alternating current signal; and
a controller configured to cause:
placing a substrate on the substrate support, the substrate including a silicon-containing film and a mask on the silicon-containing film, the mask having an opening having a first direction and a second direction different from the first direction;
selecting a narrowing of the opening either in the first direction or in the second direction;
in response to selection of narrowing in the first direction, performing a first process selection; and
in response to selection of narrowing in the second direction, performing a second process selection; and
wherein each of the first process selection and the second process selection includes supplying an inert gas to the chamber, generating a plasma in the chamber and supplying the bias signal to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release silicon particles from the upper electrode, thereby depositing a silicon-containing film on the substrate;
wherein the first process selection further includes supplying the first radio-frequency power from the first radio-frequency generator to the upper electrode or the lower electrode while stop supplying the second radio-frequency power from the second radio-frequency generator to the lower electrode, thereby depositing the silicon-containing film on sidewalls of the mask to narrow the opening by an amount greater in the first direction than in the second direction, and
wherein the second process selection further includes supplying the second radio-frequency power from the second radio frequency generator to the lower electrode while stop supplying the first radio-frequency power from the first radio-frequency generator to the upper electrode and the lower electrode, thereby depositing the silicon-containing material on sidewalls of the mask to narrow the opening by an amount greater in the second direction than in the first direction.
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15. A capacitively-coupled plasma processing apparatus comprising:
a chamber having at least one gas inlet and at least one gas outlet;
a substrate support including a lower electrode and disposed in the chamber;
an upper electrode disposed above the substrate support and including silicon-containing material;
a first radio-frequency generator electrically connected to the upper electrode or the lower electrode and configured to generate a first radio-frequency power;
a second radio-frequency generator electrically connected to the lower electrode and configured to generate a second radio-frequency power having a frequency lower than a frequency of the first radio-frequency power;
an upper bias generator electrically connected to the upper electrode and configured to generate a bias signal, the bias signal being a direct current signal or an alternating current signal; and
a controller configured to cause,
placing a substrate on the substrate support, the substrate including a silicon-containing film and a mask on the silicon-containing film, the mask having an opening having a longitudinal direction and a width direction orthogonal to the longitudinal direction;
supplying an inert gas into the chamber; and
supplying the second radio-frequency power from the second radio-frequency generator to the lower electrode to generate a plasma from the inert gas while a supply of the first radio frequency power to the upper electrode and the lower electrode is stopped, and supplying the bias signal to the upper electrode from the upper bias generator, thereby depositing a silicon-containing material on sidewalls of the opening of the mask to reduce the opening of the mask with a reduction amount being larger in the longitudinal direction than a reduction amount in the width direction.
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