US 11,721,520 B2
Semiconductor device, multi-charged-particle beam writing apparatus, and multi-charged-particle beam exposure apparatus
Kei Obara, Kawasaki (JP); Kazuyuki Higashi, Yokohama (JP); Miyoko Shimada, Yokohama (JP); Yoshiaki Shimooka, Sagamihara (JP); Hitomi Yamaguchi, Yokohama (JP); Yoshikuni Goshima, Yokohama (JP); Hirofumi Morita, Setagaya-ku (JP); and Hiroshi Matsumoto, Yokohama (JP)
Assigned to NuFlare Technology, Inc., Yokohama (JP)
Filed by NuFlare Technology, Inc., Yokohama (JP)
Filed on Jan. 21, 2022, as Appl. No. 17/581,079.
Claims priority of application No. 2021-025289 (JP), filed on Feb. 19, 2021.
Prior Publication US 2022/0270850 A1, Aug. 25, 2022
Int. Cl. H01J 37/317 (2006.01); H01J 37/04 (2006.01)
CPC H01J 37/3177 (2013.01) [H01J 37/045 (2013.01); H01J 2237/0437 (2013.01); H01J 2237/31776 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a plane direction of the substrate and along a second direction intersecting the first direction in the substrate surface;
an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes;
a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction;
a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and
a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.