US 11,721,517 B2
Focused ion beam processing apparatus
Hiroshi Oba, Tokyo (JP); Yasuhiko Sugiyama, Tokyo (JP); Yoshitomo Nakagawa, Tokyo (JP); and Koji Nagahara, Tokyo (JP)
Assigned to HITACHI HIGH-TECH SCIENCE CORPORATION, Tokyo (JP)
Filed by HITACHI HIGH-TECH SCIENCE CORPORATION, Tokyo (JP)
Filed on Mar. 19, 2021, as Appl. No. 17/207,184.
Claims priority of application No. JP2020-050997 (JP), filed on Mar. 23, 2020.
Prior Publication US 2021/0296080 A1, Sep. 23, 2021
Int. Cl. H01J 37/12 (2006.01); H01J 37/09 (2006.01); H01J 37/317 (2006.01); H01J 37/08 (2006.01); H01J 37/20 (2006.01); H01J 37/21 (2006.01)
CPC H01J 37/12 (2013.01) [H01J 37/08 (2013.01); H01J 37/09 (2013.01); H01J 37/20 (2013.01); H01J 37/21 (2013.01); H01J 37/3175 (2013.01); H01J 2237/31788 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A focused ion beam processing apparatus for processing a cross-section parallel to an irradiation direction of a focused ion beam with respect to a sample comprising:
an ion source;
a sample stage holding a sample;
a condenser lens focusing ions emitted from the ion source into a focused ion beam;
an aperture having a slit with at least one side in a straight line shape, the slit being used to mask a part of the focused ion beam focused by the condenser lens to process the sample into a desired shape;
a projection lens placed in a beam path between the aperture and the sample stage, and focusing the focused ion beam that passed through the aperture on a predetermined position on the sample; and
a computer as a control means configured to control elements of the focused ion beam processing apparatus,
wherein, in a transfer mode, the computer is configured to set:
an applied voltage of the condenser lens to be 80% or more and less than 100% relative to an initial applied voltage of the condenser lens, wherein the initial applied voltage is set when the focused ion beam is focused on a main surface of the projection lens by Köhler illumination;
a position of the aperture such that the focused ion beam is masked by the aperture with the at least one side of the aperture at a distance greater than 0 μm and equal to or less than 500 μm from a center of the focused ion beam; and
an applied voltage of the projection lens such that an image formed by the slit of the aperture is focused on a surface of the sample, and
wherein the surface of the sample is irradiated at once with the focused ion beam that is formed in a shape of the slit without scanning with the focused ion beam so that the shape of the slit is transferred onto the sample in the transfer mode.