CPC H01H 1/0094 (2013.01) [H01H 1/62 (2013.01); H01H 1/14 (2013.01); H01H 2231/002 (2013.01); H01H 2239/06 (2013.01)] | 13 Claims |
1. A memory device comprising:
a first electrode; and
a second electrode disposed above the first electrode,
wherein the memory device operates in a programmed state or an erased state according to heat generated by a voltage applied to at least one among the first and second electrodes,
wherein the second electrode comprises a first electrode portion, a second electrode portion, and a beam connecting the first electrode portion and the second electrode portion, wherein:
the beam is connected between a body part of the first electrode portion and a body part of the second electrode portion; and:
the beam comes into contact with the first electrode on the basis of thermal expansion due to heat generated by a current flowing between the body part of the first electrode portion and the body part of the second electrode portion, whereby the memory device operates in the programmed state; and/or
the beam is separated from the first electrode on the basis of thermal expansion due to heat generated by current flowing between two ends of the body part of the first electrode portion and thermal expansion due to heat generated by a current flowing between two ends of the body part of the second electrode portion, whereby the memory device operates in the erased state.
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