CPC G11C 16/30 (2013.01) [G11C 5/145 (2013.01); G11C 5/147 (2013.01)] | 20 Claims |
1. A method, comprising:
receiving, by a power management component of a memory device, a first supply voltage having a first voltage level from a memory system;
outputting a second supply voltage to a memory die of the memory device based at least in part on receiving the first supply voltage, the second supply voltage having a second voltage level different than the first voltage level of the first supply voltage;
measuring a third voltage level of the second supply voltage at a location on the memory die based at least in part on outputting the second supply voltage; and
outputting the second supply voltage having a fourth voltage level different than the second voltage level based at least in part on measuring the third voltage level at the location on the memory die.
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