US 11,721,386 B2
Sensing and tuning for memory die power management
Fuad Badrieh, Boise, ID (US); Thomas H. Kinsley, Boise, ID (US); and Baekkyu Choi, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 9, 2021, as Appl. No. 17/470,743.
Application 17/470,743 is a continuation of application No. 16/863,967, filed on Apr. 30, 2020, granted, now 11,133,053.
Application 16/863,967 is a continuation of application No. 16/185,464, filed on Nov. 9, 2018, granted, now 11,081,161, issued on Aug. 3, 2021.
Prior Publication US 2022/0068347 A1, Mar. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/4074 (2006.01)
CPC G11C 11/4074 (2013.01) 20 Claims
OG exemplary drawing
 
1. A method, comprising:
identifying, by a power management component, a first voltage associated with operation of a memory array;
determining whether the first voltage satisfies a threshold associated with operating the memory array;
transmitting, to a host device, a signal indicating that the first voltage satisfies the threshold based at least in part on determining that the first voltage satisfies the threshold; and
adjusting, by the power management component, a second voltage supplied to the memory array based at least in part on determining that the first voltage satisfies the threshold.