US 11,720,445 B2
Customized parameterization of read parameters after a decoding failure for solid state storage devices
Zheng Wang, Louisville, CO (US); Ara Patapoutian, Hopkinton, MA (US); and Bengt Anders Ulriksson, Longmont, CO (US)
Assigned to Seagate Technology LLC, Fremont, CA (US)
Filed by Seagate Technology, LLC, Fremont, CA (US)
Filed on Mar. 14, 2022, as Appl. No. 17/694,321.
Application 17/694,321 is a continuation of application No. 17/115,940, filed on Dec. 9, 2020, granted, now 11,301,323.
Application 17/115,940 is a continuation of application No. 16/259,346, filed on Jan. 28, 2019, granted, now 10,891,189, issued on Jan. 12, 2021.
Prior Publication US 2022/0197742 A1, Jun. 23, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 29/02 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G06F 11/00 (2006.01); H03M 13/11 (2006.01)
CPC G06F 11/1068 (2013.01) [G06F 11/008 (2013.01); G11C 11/5642 (2013.01); H03M 13/1111 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method, comprising:
determining a correlation between optimal reference voltage offsets and a signal counts metric associated with a solid-state storage device;
in response to a decoding failure of a codeword read from a first memory of the solid-state storage device, obtaining at least three read values of the codeword;
calculating a signal counts metric value from the at least three reads;
computing an optimal reference voltage offset from the signal counts metric and the correlation;
determining a new center read reference voltage based on a current center reference voltage and the optimal reference voltage offset; and
performing at least one subsequent read of the codeword following the decoding failure utilizing the new center read reference voltage.