US 11,720,022 B2
Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same
Jin-Kyun Lee, Incheon (KR); Hyun-Taek Oh, Incheon (KR); Seok-Heon Jung, Incheon (KR); and Jeong-Seok Mun, Gochang-gun (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by Inha University Research and Business Foundation, Incheon (KR)
Filed on Feb. 12, 2020, as Appl. No. 16/788,467.
Claims priority of application No. 10-2019-0016033 (KR), filed on Feb. 12, 2019; application No. 10-2019-0113359 (KR), filed on Sep. 16, 2019; and application No. 10-2020-0006852 (KR), filed on Jan. 17, 2020.
Prior Publication US 2020/0257200 A1, Aug. 13, 2020
Int. Cl. G03F 7/039 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01); G03F 7/027 (2006.01)
CPC G03F 7/0392 (2013.01) [G03F 7/027 (2013.01); G03F 7/2004 (2013.01); G03F 7/325 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A compound represented by Formula 1 below:

OG Complex Work Unit Chemistry
wherein in Formula 1, A1, A2, A3, A4, A5, A6 A7, A8, and A9 are each independently one of hydrogen, deuterium, and an alkyl group having 1 to 5 carbon atoms, B1, B2, and B3 are each independently one of hydrogen, deuterium, and an alkyl group having 1 to 5 carbon atoms, Z is one of hydrogen, deuterium, an alkyl group having 1 to 5 carbon atoms, and a substituted or unsubstituted hydrocarbon ring having 5 to 30 carbon atoms, and R1, R2, R3, R4, R5, and R6 each independently comprise one of deuterium, a halogen-substituted alkyl group having 3 to 20 carbon atoms, an alkenyl group having 3 to 20 carbon atoms, a silyl group having 1 to 10 carbon atoms, a carbonyl group having 2 to 10 carbon atoms, and a halogen-substituted hydrocarbon ring having 5 to 20 carbon atoms; provided that when at least one of R1, R2, R3, R4, R5, and R6 is comprise a carbonyl group having 2 to 10 carbon atoms, Z is a substituted or unsubstituted hydrocarbon ring having 5 to 30 carbon atoms.