CPC G01R 33/091 (2013.01) [H10N 50/80 (2023.02); H10N 50/85 (2023.02); G01R 33/093 (2013.01); G01R 33/096 (2013.01); G01R 33/098 (2013.01)] | 23 Claims |
1. A magnetoresistive sensor, comprising
a free layer;
an insulative barrier layer;
a reference layer, wherein the free layer and the reference layer are on opposite sides of the barrier layer; and
a seed layer comprising non-adjacent first and second layers of CoFe configured to interface with the reference layer for canceling hysteresis in the magnetoresistive sensor.
|