US 11,719,771 B1
Magnetoresistive sensor having seed layer hysteresis suppression
Paolo Campiglio, Arcueil (FR); Samridh Jaiswal, London (GB); Yen Ting Liu, Hsinchu (TW); Maxim Klebanov, Palm Coast, FL (US); and Sundar Chetlur, Frisco, TX (US)
Assigned to Allegro MicroSystems, LLC, Manchester, NH (US)
Filed by Allegro MicroSystems, LLC, Manchester, NH (US)
Filed on Jun. 2, 2022, as Appl. No. 17/805,054.
Int. Cl. G01R 33/09 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G01R 33/091 (2013.01) [H10N 50/80 (2023.02); H10N 50/85 (2023.02); G01R 33/093 (2013.01); G01R 33/096 (2013.01); G01R 33/098 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A magnetoresistive sensor, comprising
a free layer;
an insulative barrier layer;
a reference layer, wherein the free layer and the reference layer are on opposite sides of the barrier layer; and
a seed layer comprising non-adjacent first and second layers of CoFe configured to interface with the reference layer for canceling hysteresis in the magnetoresistive sensor.