CPC G01R 27/02 (2013.01) [G01R 31/2621 (2013.01); G01R 27/205 (2013.01); H03K 17/687 (2013.01)] | 14 Claims |
1. A test method for a contact resistor, configured to test a contact resistor of a metal-oxide-semiconductor field-effect transistor (MOSFET), comprising:
acquiring a resistance value per area of the contact resistor;
acquiring a temperature coefficient of resistance of the contact resistor; and
determining a target resistance value of the contact resistor according to the resistance value per area, the temperature coefficient of resistance, and an area of the contact resistor.
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