US 11,719,730 B2
Test method and device for contact resistor
Haiyang Yang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jul. 30, 2021, as Appl. No. 17/389,581.
Application 17/389,581 is a continuation of application No. PCT/CN2021/095588, filed on May 24, 2021.
Claims priority of application No. 202011241123.6 (CN), filed on Nov. 9, 2020.
Prior Publication US 2022/0146560 A1, May 12, 2022
Int. Cl. G01R 27/02 (2006.01); G01R 27/20 (2006.01); G01R 31/26 (2020.01); H03K 17/687 (2006.01)
CPC G01R 27/02 (2013.01) [G01R 31/2621 (2013.01); G01R 27/205 (2013.01); H03K 17/687 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A test method for a contact resistor, configured to test a contact resistor of a metal-oxide-semiconductor field-effect transistor (MOSFET), comprising:
acquiring a resistance value per area of the contact resistor;
acquiring a temperature coefficient of resistance of the contact resistor; and
determining a target resistance value of the contact resistor according to the resistance value per area, the temperature coefficient of resistance, and an area of the contact resistor.