US 11,719,633 B2
Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits
Jerry R. Meyer, Catonsville, MD (US); Igor Vurgaftman, Severna Park, MD (US); Chadwick Lawrence Canedy, Washington, DC (US); William W. Bewley, Falls Church, VA (US); Chui Soo Kim, Springfield, VA (US); Charles D. Merritt, Fairfax, VA (US); Michael V. Warren, Arlington, VA (US); R. Joseph Weiblen, Washington, DC (US); and Mijin Kim, Springfield, VA (US)
Assigned to The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed by The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed on Aug. 20, 2021, as Appl. No. 17/407,257.
Application 17/407,257 is a division of application No. 16/509,613, filed on Jul. 12, 2019, granted, now 11,125,689.
Claims priority of provisional application 62/697,419, filed on Jul. 13, 2018.
Prior Publication US 2021/0396669 A1, Dec. 23, 2021
Int. Cl. G01N 21/59 (2006.01); H01S 5/028 (2006.01); H01S 5/10 (2021.01); H01S 5/125 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); G02B 6/10 (2006.01); G01N 21/27 (2006.01); G01N 21/25 (2006.01); G01J 3/18 (2006.01); G01J 3/28 (2006.01); H01S 5/22 (2006.01); H01S 5/06 (2006.01); H01S 5/062 (2006.01)
CPC G01N 21/59 (2013.01) [G01J 3/1895 (2013.01); G01J 3/2803 (2013.01); G01N 21/255 (2013.01); G01N 21/27 (2013.01); G02B 6/102 (2013.01); H01S 5/0215 (2013.01); H01S 5/0262 (2013.01); H01S 5/0287 (2013.01); H01S 5/0421 (2013.01); H01S 5/101 (2013.01); H01S 5/125 (2013.01); H01S 5/2063 (2013.01); H01S 5/2206 (2013.01); H01S 5/3402 (2013.01); H01S 5/343 (2013.01); G01N 2201/0612 (2013.01); H01S 5/062 (2013.01); H01S 5/0612 (2013.01)] 1 Claim
OG exemplary drawing
 
1. A chemical sensor comprising:
a broadband infrared optical source;
an extended passive sensing waveguide having a first end and a second end and having a top surface exposed to an ambient sample gas or liquid,
the first end of the extended passive sensing waveguide being coupled to an output of the broadband optical source, and
the second end of the extended passive sensing waveguide being coupled to a multi-spectral detector comprising a plurality of resonant-cavity infrared detectors (RCIDs) aligned in series along the extended passive sensing waveguide,
wherein each of the RCIDs is bounded by a corresponding set of two distributed Bragg reflector (DBR) mirrors formed by gratings having a predetermined grating pitch etched into the extended passive sensing waveguide,
wherein the predetermined grating pitch of the two DBR mirrors in each set of DBR mirrors is the same and is different from a grating pitch of any other set of DBR mirrors;
wherein each RCID has a corresponding resonance wavelength that is different from a resonance wavelength of every other RCID in the series;
wherein each RCID includes a top electrical contact configured to detect a photocurrent resulting from light flowing in the RCID due to light propagating in the extended passive sensing waveguide;
wherein the photocurrent flowing in each RCID is sensitive primarily to incoming light having a wavelength within one linewidth of the resonance wavelength of the RCID but is less sensitive to light having a wavelength not within one linewidth of the resonance wavelength of the RCID; and
wherein a total of the photocurrent measured by the plurality of RCIDs provides information about at least one spectral characteristic of light input to the extended passive sensing waveguide.