US 11,718,926 B2
Method of single crystal growth by controlling the heating of a source material and the cooling of a backside of a lid
Chung-Yi Chen, Hsinchu (TW)
Assigned to HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed by HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed on Sep. 27, 2021, as Appl. No. 17/448,895.
Claims priority of application No. 110130719 (TW), filed on Aug. 19, 2021.
Prior Publication US 2023/0059271 A1, Feb. 23, 2023
Int. Cl. C30B 23/06 (2006.01); C30B 23/00 (2006.01); C30B 35/00 (2006.01); C30B 29/36 (2006.01)
CPC C30B 23/066 (2013.01) [C30B 23/005 (2013.01); C30B 29/36 (2013.01); C30B 35/00 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of single crystal growth, comprising:
disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, wherein the single crystal growth apparatus comprises a lid and a heat insulation cover over the lid, and the heat insulation cover has a plurality of openings;
disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus;
heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer; and
after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer, wherein providing the coolant gas at the backside of the lid comprises providing the coolant gas from a gas supply to at least one of the openings, such that the coolant gas flows in the openings and a gap between the heat insulation cover and the lid.