US 11,718,914 B2
Techniques for controlling precursors in chemical deposition processes
Elaina Babayan, Gloucester, MA (US); Sarah White, Gloucester, MA (US); Vijay Venugopal, Gloucester, MA (US); and Jonathan Bakke, Gloucester, MA (US)
Assigned to Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US)
Filed by Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US)
Filed on Sep. 4, 2020, as Appl. No. 17/12,980.
Application 17/012,980 is a continuation of application No. 15/946,483, filed on Apr. 5, 2018, granted, now 10,822,699.
Claims priority of provisional application 62/611,645, filed on Dec. 29, 2017.
Prior Publication US 2020/0399758 A1, Dec. 24, 2020
Int. Cl. C23C 16/52 (2006.01); C23C 16/448 (2006.01); H01L 21/67 (2006.01); C23C 16/455 (2006.01); G05D 16/04 (2006.01); G01F 1/00 (2022.01); G05D 11/13 (2006.01); G05D 16/00 (2006.01); H01L 21/00 (2006.01); H01L 21/66 (2006.01); G05D 11/00 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/448 (2013.01); C23C 16/45544 (2013.01); C23C 16/45553 (2013.01); G01F 1/00 (2013.01); G05D 11/00 (2013.01); G05D 11/132 (2013.01); G05D 16/00 (2013.01); G05D 16/04 (2013.01); G05D 16/0402 (2019.01); H01L 21/00 (2013.01); H01L 21/67253 (2013.01); H01L 22/00 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of controlling precursor flow, comprising:
measuring a change in detected signal intensity in a cell of the gas delivery system, caused by the flow of a precursor;
determining a precursor flux value based upon the change in the detected signal intensity;
determining a flux error value based upon the precursor flux value;
calculating a new set of temperature setpoints to be applied to an ampoule that contains the precursor; and
checking for an end-of ampoule-life condition when the new set of temperature setpoints is not within a set of current temperature limits of the ampoule.