US 11,718,911 B2
Deposition method
Takashi Chiba, Iwate (JP); and Jun Sato, Iwate (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 15, 2020, as Appl. No. 16/875,123.
Claims priority of application No. 2019-094833 (JP), filed on May 20, 2019.
Prior Publication US 2020/0370178 A1, Nov. 26, 2020
Int. Cl. C23C 16/455 (2006.01); C23C 16/04 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01)
CPC C23C 16/45538 (2013.01) [C23C 16/045 (2013.01); C23C 16/402 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A deposition method comprising:
performing a plurality of atomic layer deposition cycles each including:
causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate;
causing a silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and
performing a reforming process on the silicon oxide film by exposing the silicon oxide film to a plasma formed from a reform gas including an oxygen gas and a first gas; and
changing the first gas from an argon gas to a helium gas during the performing of the atomic layer deposition cycles, wherein the first gas is the argon gas during a former part of the atomic layer deposition cycles, and is the helium gas during a latter part of the atomic layer deposition cycles,
wherein the first atomic layer deposition cycle is performed using the oxygen gas and the argon gas.