US 11,718,905 B2
Functionally integrated coating structures
Nader Kalkhoran, Charlotte, NC (US); Eric Tobin, Charlotte, NC (US); Tim Egge, Charlotte, NC (US); Jason Burns, Charlotte, NC (US); Rick Oliver, Charlotte, NC (US); Angus McFadden, Charlotte, NC (US); and Jason Wright, Charlotte, NC (US)
Assigned to Technetics Group LLC, Charlotte, NC (US)
Appl. No. 16/624,233
Filed by TECHNETICS GROUP LLC, Charlotte, NC (US)
PCT Filed May 30, 2018, PCT No. PCT/US2018/035001
§ 371(c)(1), (2) Date Dec. 18, 2019,
PCT Pub. No. WO2018/236559, PCT Pub. Date Dec. 27, 2018.
Claims priority of provisional application 62/521,811, filed on Jun. 19, 2017.
Prior Publication US 2020/0131619 A1, Apr. 30, 2020
Int. Cl. C23C 14/08 (2006.01); C23C 14/06 (2006.01); C23C 14/24 (2006.01); C23C 28/04 (2006.01); C23C 28/00 (2006.01); H01J 37/32 (2006.01); C23C 14/22 (2006.01)
CPC C23C 14/081 (2013.01) [C23C 14/0694 (2013.01); C23C 14/083 (2013.01); C23C 14/221 (2013.01); C23C 14/24 (2013.01); C23C 28/042 (2013.01); C23C 28/42 (2013.01); H01J 37/32477 (2013.01); H01J 37/32715 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method of depositing a functionally integrated coating structure on a substrate, comprising:
receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system;
disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3) at a deposition rate of between 1 and 10 angstroms per second and the first ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;
disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is Yttrium Oxide (Y2O3) at a deposition rate of between 1 and 10 angstroms per second and the second ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;
disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Yttrium Fluoride (YF3) at a deposition rate of between 1 and 10 angstroms per second and the third ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;
securing the second ion beam;
disposing a second shutter assembly over the second evaporator species, wherein the second shutter assembly is configured to inhibit the evaporation of the second evaporator species;
securing the third ion beam;
disposing a third shutter assembly over the third evaporator species, wherein the third shutter assembly is configured to inhibit the evaporation of the third evaporator species;
wherein disposing the substrate in the first zone, disposing the substrate in the second zone and disposing the substrate in the third zone includes orbiting the substrate for a plurality of consecutive orbits through each of the first zone, the second zone and the third zone;
activating the second ion beam;
disposing the second shutter assembly away from the second evaporator species, wherein the second shutter assembly does not inhibit the evaporation of the second evaporator species;
increasing the deposition rate in the second zone from zero angstroms per second to 1 to 10 angstroms per second, wherein the deposition rate in the second zone increases relative to the consecutive orbits of the substrate through the second zone;
decreasing the deposition rate in the first zone from 1 to 10 angstroms per second to less than 0.1 angstroms per second, wherein the deposition rate in the first zone decreases relative to the consecutive orbits of the substrate through the first zone;
securing the first ion beam; and
disposing a first shutter assembly over the first evaporator species, wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species.