US 11,718,812 B2
Post-CMP cleaning composition for germanium-containing substrate
Ji Cui, Bolingbrook, IL (US); William Weilun Hong, Hsinchu (TW); Gin-Chen Huang, Hsinchu (TW); Shich-Chang Suen, Hsinchu (TW); and Kei-Wei Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 3, 2021, as Appl. No. 17/191,534.
Claims priority of provisional application 63/031,292, filed on May 28, 2020.
Prior Publication US 2021/0371774 A1, Dec. 2, 2021
Int. Cl. C11D 3/43 (2006.01); C11D 1/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01); C11D 11/00 (2006.01); C11D 3/37 (2006.01); C11D 3/30 (2006.01); C11D 3/00 (2006.01); H01L 21/02 (2006.01)
CPC C11D 1/40 (2013.01) [C11D 3/0047 (2013.01); C11D 3/30 (2013.01); C11D 3/3723 (2013.01); C11D 3/3773 (2013.01); C11D 3/43 (2013.01); C11D 11/0047 (2013.01); H01L 21/02041 (2013.01); H01L 21/304 (2013.01); H01L 21/306 (2013.01); H01L 21/3212 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for removing contaminants from a substrate after a chemical mechanical polishing process, comprising:
providing the substrate, wherein a surface layer of the substrate compresses a silicon germanium region; and
cleaning the surface layer of the substrate with a cleaning composition, the cleaning composition comprising an oligomeric or polymeric polyamine, wherein cleaning the surface layer of the substrate comprises:
supplying the cleaning composition to the surface layer of the substrate; and
mechanically brushing the surface layer of the substrate while the cleaning composition is supplied to the surface.