CPC C11D 1/40 (2013.01) [C11D 3/0047 (2013.01); C11D 3/30 (2013.01); C11D 3/3723 (2013.01); C11D 3/3773 (2013.01); C11D 3/43 (2013.01); C11D 11/0047 (2013.01); H01L 21/02041 (2013.01); H01L 21/304 (2013.01); H01L 21/306 (2013.01); H01L 21/3212 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. A method for removing contaminants from a substrate after a chemical mechanical polishing process, comprising:
providing the substrate, wherein a surface layer of the substrate compresses a silicon germanium region; and
cleaning the surface layer of the substrate with a cleaning composition, the cleaning composition comprising an oligomeric or polymeric polyamine, wherein cleaning the surface layer of the substrate comprises:
supplying the cleaning composition to the surface layer of the substrate; and
mechanically brushing the surface layer of the substrate while the cleaning composition is supplied to the surface.
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