US 11,718,767 B2
Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
Ming-Shih Tsai, Hsinchu (TW); Chia-Chien Lee, Hsinchu (TW); Rung-Je Yang, Hsinchu (TW); Anu Mallikarjunan, Hsinchu (TW); Chris Keh-Yeuan Li, Hsinchu (TW); Hongjun Zhou, Chandler, AZ (US); Joseph D. Rose, Gilbert, AZ (US); and Xiaobo Shi, Chandler, AZ (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Filed by Versum Materials US, LLC, Tempe, AZ (US)
Filed on Aug. 6, 2019, as Appl. No. 16/533,381.
Claims priority of provisional application 62/716,769, filed on Aug. 9, 2018.
Claims priority of provisional application 62/716,784, filed on Aug. 9, 2018.
Prior Publication US 2020/0048551 A1, Feb. 13, 2020
Int. Cl. C09G 1/02 (2006.01); C09K 13/00 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/306 (2006.01); C09K 3/14 (2006.01); B24B 37/04 (2012.01); B24B 1/00 (2006.01); C09G 1/06 (2006.01); C09G 1/04 (2006.01); C09G 1/00 (2006.01); C09K 13/04 (2006.01)
CPC C09G 1/02 (2013.01) [B24B 1/00 (2013.01); B24B 37/044 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); C09K 13/00 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); C09K 13/04 (2013.01)] 15 Claims
 
1. A chemical mechanical planarization (CMP) composition for polishing oxide material consisting essentially of:
an abrasive selected from the group consisting of calcined ceria, colloidal ceria, ceria coated silica particles, and combinations thereof;
a removal rate accelerator having a pyridine group, wherein the pyridine group has a structure of:

OG Complex Work Unit Chemistry
wherein R1, R2, R3, R4 and R5 are independently selected from the group consisting of hydrogen, a carboxylic acid, a carboxylic acid ester, an organic sulfonic acid, an organic amine, an organic amide and a hydroxyl group;
and
a solvent, and
optionally at least one additive selected from the groups consisting of
an additive for removal rate selectivity selected from the group consisting of sorbitol, galactose, arabinose, ribose, xylose, maltitol, lactose, maltose and combinations thereof;
a pH adjuster selected from the group consisting of sodium hydroxide; cesium hydroxide; potassium hydroxide; ammonium hydroxide; quaternary organic ammonium hydroxide; nitric acid; phosphoric acid; sulfuric acid; and combinations thereof;
a surfactant selected from the group consisting of dodecyl sulfate sodium salt, dodecyl sulfate ammonium salt, alcohol ethoxylates, acetylenic surfactant, stearylbenzyldimethylammonium chloride or nitrate, and combination thereof;
a dispersant selected from the group consisting of lecithin; isoctylphenyl ether;
amine salts of alkylaryl sulfonates; and combinations thereof;
and
a biological growth inhibitor is selected from the group consisting of tetramethylammonium chloride; tetraethylammonium chloride;
tetrapropylammonium chloride; alkylbenzyldimethylammonium chloride or alkylbenzyldimethylammonium hydroxide, wherein the alkyl chain ranges from 1 to about 20 carbon atoms; sodium chlorite; sodium hypochlorite;
methylisothiazolinone; methylchloroisothiazolinone; benzisothiazolinone; and combinations thereof;
wherein the composition has a pH greater than 7; and
the abrasive comprises particles having a zeta potential more negative than −25 millivolts.