CPC B81B 7/0038 (2013.01) [B81C 1/00285 (2013.01)] | 22 Claims |
1. An integrated circuit comprising:
a silicon substrate;
a lid;
a microelectromechanical system (MEMS) structure having a movable body within a cavity, the cavity being defined at least in part by release of oxide from at least one oxide layer through at least one vent in the lid, and at least one electrode;
one or more electrical contacts on an exterior surface of the integrated circuit;
at least one conductive via that electrically couples the one or more electrical contacts with the at least one electrode;
one or more barrier layers to inhibit diffusion of hydrogen and helium through an oxide present in the lid;
one or more barrier materials encircling the at least one oxide layer;
wherein the one or more barrier layers, the one or more barrier materials, the at least one via, the lid and the silicon substrate encapsulate the cavity relative to an atmosphere outside said integrated circuit, so as to inhibit the passage of hydrogen from the atmosphere into said cavity.
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