US 11,718,082 B2
Method of manufacturing fine pattern and method of manufacturing display device using the same
Hirokazu Ikeda, Kakegawa (JP); Toshiaki Nonaka, Kakegawa (JP); Yoshisuke Toyama, Kakegawa (JP); and Takahide Suzuki, Kakegawa (JP)
Assigned to Merck Patent GmbH, Darmstadt (DE)
Appl. No. 16/757,430
Filed by Merck Patent GmbH, Darmstadt (DE)
PCT Filed Oct. 17, 2018, PCT No. PCT/EP2018/078351
§ 371(c)(1), (2) Date Apr. 20, 2020,
PCT Pub. No. WO2019/076956, PCT Pub. Date Apr. 25, 2019.
Claims priority of application No. 2017-203836 (JP), filed on Oct. 20, 2017.
Prior Publication US 2021/0187930 A1, Jun. 24, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. B32B 38/00 (2006.01); B32B 5/14 (2006.01); G03F 7/18 (2006.01); G03F 7/24 (2006.01); G03F 7/40 (2006.01)
CPC B32B 38/0036 (2013.01) [B32B 5/145 (2013.01); G03F 7/18 (2013.01); G03F 7/24 (2013.01); G03F 7/405 (2013.01); B32B 2457/202 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of manufacturing a fine pattern comprising the following steps of:
(1) a step of coating a resist composition comprising a novolak resin having an alkali dissolution rate of 100 to 3,000 A on a substrate to form a resist composition layer;
(2) a step of subjecting said resist composition layer to exposure;
(3) a step of developing said resist composition layer to form a resist pattern;
(4) a step of subjecting said resist pattern to flood exposure;
(5) a step of coating a fine pattern forming composition on the surface of said resist pattern to form a fine pattern forming composition layer;
(6) a step of heating said resist pattern and said fine pattern forming composition layer to cure the regions of said fine pattern forming composition layer in the vicinity of said resist pattern and to form an insolubilized layer; and
(7) a step of removing uncured regions of said fine pattern forming composition layer and
wherein the exposure in the step (2) is performed using a projector lens having a numerical aperture of 0.08-0.15 and
wherein a resist pattern is formed and has a cross section shape of a hole or a line is observed, L1 is the pattern width at a 10 percent portion (D1) of the depth and L2 is the pattern width at a 90 percent portion (D2) of the depth and has a Taper index (L2/L1) of the fine pattern is 1.05-18.