US 11,717,866 B2
Etching metal-oxide and protecting chamber components
Akhil N. Singhal, Portland, OR (US); Dustin Zachary Austin, Corvallis, OR (US); Alon Ganany, Tigard, OR (US); and Daniel Boatright, Estacada, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on May 6, 2022, as Appl. No. 17/738,825.
Application 17/738,825 is a continuation of application No. 17/278,191, abandoned, previously published as PCT/US2019/052208, filed on Sep. 20, 2019.
Claims priority of provisional application 62/734,648, filed on Sep. 21, 2018.
Prior Publication US 2022/0258216 A1, Aug. 18, 2022
Int. Cl. B08B 9/08 (2006.01); B08B 3/08 (2006.01); B08B 5/00 (2006.01); C23C 16/44 (2006.01)
CPC B08B 9/08 (2013.01) [B08B 3/08 (2013.01); B08B 5/00 (2013.01); C23C 16/4405 (2013.01); B08B 2209/08 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of cleaning tin oxide from interior portions of a plasma-based processing chamber, the method comprising:
introducing methane into the processing chamber;
maintaining a temperature of greater than about 135° C. within the processing chamber to maintain a concentration level of the methane; and
avoiding introducing chlorine into the processing chamber.