US 11,717,809 B2
Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof
Shutang Chen, Livermore, CA (US); and Gugang Chen, Palo Alto, CA (US)
Assigned to HONDA MOTOR CO., LTD., Tokyo (JP)
Filed by Honda Motor Co., Ltd., Tokyo (JP)
Filed on Aug. 30, 2022, as Appl. No. 17/899,535.
Application 17/899,535 is a continuation of application No. 17/001,078, filed on Aug. 24, 2020, granted, now 11,458,461.
Prior Publication US 2022/0410130 A1, Dec. 29, 2022
Int. Cl. B01J 23/52 (2006.01); B01J 23/44 (2006.01); B01J 35/02 (2006.01); B01J 23/42 (2006.01); B01J 27/04 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01)
CPC B01J 23/52 (2013.01) [B01J 23/42 (2013.01); B01J 23/44 (2013.01); B01J 27/04 (2013.01); B01J 35/023 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A metal-semiconductor hybrid structure, comprising:
a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16, the first component having an average size of about 3 nm to about 20 nm as determined by transmission electron microscopy; and
a second component comprising a metal from Group 7-Group 11, the second component having an average size of about 0.5 nm to about 3 nm as determined by transmission electron microscopy, wherein the Group 11-Group 14 metal of the first component and the Group 7-Group 11 metal of the second component are the same or different, wherein the metal-semiconductor hybrid structure has a molar ratio of the Group 7-Group 11 metal to the Group 11-Group 14 metal from about 1:20 to about 1:5.