CPC B01J 23/52 (2013.01) [B01J 23/42 (2013.01); B01J 23/44 (2013.01); B01J 27/04 (2013.01); B01J 35/023 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01)] | 8 Claims |
1. A metal-semiconductor hybrid structure, comprising:
a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16, the first component having an average size of about 3 nm to about 20 nm as determined by transmission electron microscopy; and
a second component comprising a metal from Group 7-Group 11, the second component having an average size of about 0.5 nm to about 3 nm as determined by transmission electron microscopy, wherein the Group 11-Group 14 metal of the first component and the Group 7-Group 11 metal of the second component are the same or different, wherein the metal-semiconductor hybrid structure has a molar ratio of the Group 7-Group 11 metal to the Group 11-Group 14 metal from about 1:20 to about 1:5.
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