US 11,716,903 B2
Thermoelectric conversion element, thermoelectric conversion module, optical sensor, method of producing thermoelectric conversion material, and method of producing thermoelectric conversion element
Masahiro Adachi, Osaka (JP); Yoshiyuki Yamamoto, Osaka (JP); and Tsunehiro Takeuchi, Nagoya (JP)
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP); and TOYOTA SCHOOL FOUNDATION, Nagoya (JP)
Appl. No. 17/262,980
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP); and TOYOTA SCHOOL FOUNDATION, Nagoya (JP)
PCT Filed Jul. 4, 2019, PCT No. PCT/JP2019/026678
§ 371(c)(1), (2) Date Jan. 25, 2021,
PCT Pub. No. WO2020/049852, PCT Pub. Date Mar. 12, 2020.
Claims priority of application No. 2018-164419 (JP), filed on Sep. 3, 2018.
Prior Publication US 2021/0167270 A1, Jun. 3, 2021
Int. Cl. H10N 10/17 (2023.01); B22F 9/00 (2006.01); H10N 10/01 (2023.01); H10N 10/81 (2023.01); H10N 10/851 (2023.01)
CPC H10N 10/17 (2023.02) [B22F 9/002 (2013.01); H10N 10/01 (2023.02); H10N 10/81 (2023.02); H10N 10/851 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A thermoelectric conversion element comprising:
a thermoelectric conversion material portion composed of a material having a band gap;
a first electrode disposed in contact with the thermoelectric conversion material portion;
a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and
a sealing portion that seals the thermoelectric conversion material portion, wherein
a partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air,
the thermoelectric conversion material portion is composed of a semiconductor material containing an amorphous material,
the thermoelectric conversion material portion includes n type thermoelectric conversion material portion in which n type carriers are moved,
the n type thermoelectric conversion material portion includes Si, Ge, Fe, and P,
the n type thermoelectric conversion material portion has a resistivity of less than or equal to 10 mΩcm, the resistivity being assessed at room temperature and at a pressure of more than or equal to 1+10−7 Pa and less than or equal to 1+10−2 Pa, and
the n type thermoelectric conversion material portion has a resistivity of more than or equal to 100 mΩcm and less than or equal to 250 mΩcm, the resistivity being assessed at room temperature and in an external air.