CPC H10B 53/30 (2023.02) [H01L 28/75 (2013.01)] | 19 Claims |
1. A ferroelectric device comprising:
a first structure comprising ferroelectric material;
a second structure over the first structure, the second structure comprising metallic electrode; and
a third structure under the first structure, wherein the third structure is self-crystallized and is a single layer, and wherein the third structure is to:
induce crystallographic orientation in the first structure;
provide conductive characteristics of an electrode; and
provide diffusion barrier from oxygen and hydrogen.
|