	US 11,715,808 B2
	Infrared detecting device
Osamu Morohara, Tokyo (JP); Yoshiki Sakurai, Tokyo (JP); Hiromi Fujita, Tokyo (JP); and Hirotaka Geka, Tokyo (JP)
Assigned to Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed by Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed on Mar. 9, 2021, as Appl. No. 17/195,859.
Claims priority of application No. 2020-040600 (JP), filed on Mar. 10, 2020.
Prior Publication US 2021/0288206 A1, Sep. 16, 2021
Int. Cl. H01L 31/109 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); G01J 5/08 (2022.01)

CPC H01L 31/109 (2013.01) [G01J 5/0853 (2013.01); H01L 31/035236 (2013.01); H01L 31/1844 (2013.01)]

9 Claims

1. An infrared detecting device comprising:

a semiconductor substrate;

a first layer having a first conductivity type on the semiconductor substrate;

a light receiving layer on the first layer; and

a second layer having a second conductivity type on the light receiving layer,

wherein a part of the first layer, the light receiving layer, and the second layer form a mesa structure,

the light receiving layer contains Al_xIn_1-xSb (0.05<x<0.18), and

at least a part of side surfaces of the mesa structure are covered with a protective layer, and

part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.