US 11,715,771 B2
Semiconductor device and manufacturing method
Yoshiharu Kato, Matsumoto (JP); Toru Ajiki, Matsumoto (JP); Tohru Shirakawa, Matsumoto (JP); Misaki Takahashi, Matsumoto (JP); Kaname Mitsuzuka, Matsumoto (JP); Takashi Yoshimura, Matsumoto (JP); Yuichi Onozawa, Matsumoto (JP); Hiroshi Takishita, Matsumoto (JP); and Soichi Yoshida, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Oct. 22, 2020, as Appl. No. 17/78,042.
Application 17/078,042 is a continuation of application No. PCT/JP2019/044756, filed on Nov. 14, 2019.
Claims priority of application No. 2018-215549 (JP), filed on Nov. 16, 2018; and application No. 2019-203105 (JP), filed on Nov. 8, 2019.
Prior Publication US 2021/0043739 A1, Feb. 11, 2021
Int. Cl. H01L 29/36 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/36 (2013.01) [H01L 21/265 (2013.01); H01L 29/0615 (2013.01); H01L 29/1095 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a semiconductor substrate, comprising:
a hydrogen containing region including hydrogen;
a high concentration region in the hydrogen containing region, the high concentration region having a higher carrier concentration than a virtual carrier concentration determined based on a concentration of the hydrogen included and an activation ratio of the hydrogen, wherein
a carrier concentration distribution in a depth direction of the hydrogen containing region has a plurality of first peaks,
the high concentration region is arranged between two adjacent ones of the plurality of first peaks in the depth direction,
a carrier concentration distribution of the high concentration region has a second peak in the depth direction, and
the second peak in the high concentration region has a full width at half maximum greater than a full width at half maximum of any of the plurality of first peaks.