US 11,715,652 B2
Member for semiconductor manufacturing apparatus
Masaki Ishikawa, Handa (JP); and Yuji Akatsuka, Handa (JP)
Assigned to NGK INSULATORS, LTD., Nagoya (JP)
Filed by NGK INSULATORS, LTD., Nagoya (JP)
Filed on Sep. 26, 2019, as Appl. No. 16/583,711.
Claims priority of provisional application 62/738,205, filed on Sep. 28, 2018.
Prior Publication US 2020/0227291 A1, Jul. 16, 2020
Int. Cl. H01L 21/67 (2006.01); C04B 35/111 (2006.01); C04B 35/64 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/67098 (2013.01) [C04B 35/111 (2013.01); C04B 35/64 (2013.01); H01J 37/32697 (2013.01); H01J 37/32724 (2013.01); H01L 21/6833 (2013.01); H01L 21/6838 (2013.01); H01L 21/68785 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A member for a semiconductor manufacturing apparatus comprising: a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode; a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion; a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the joint portion; and a gas flow channel, wherein the gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in a thickness direction of the ceramic plate and an internal gas flow channel that passes from an upper surface to a lower surface of the dense plug while winding through the dense plug, and wherein the gas flow channel passes inside of an inner periphery of the joint portion.