CPC H01L 21/67098 (2013.01) [C04B 35/111 (2013.01); C04B 35/64 (2013.01); H01J 37/32697 (2013.01); H01J 37/32724 (2013.01); H01L 21/6833 (2013.01); H01L 21/6838 (2013.01); H01L 21/68785 (2013.01)] | 7 Claims |
1. A member for a semiconductor manufacturing apparatus comprising: a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode; a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion; a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the joint portion; and a gas flow channel, wherein the gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in a thickness direction of the ceramic plate and an internal gas flow channel that passes from an upper surface to a lower surface of the dense plug while winding through the dense plug, and wherein the gas flow channel passes inside of an inner periphery of the joint portion.
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