US 11,715,621 B2
Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
Peter F. Kurunczi, Cambridge, MA (US); Morgan Evans, Manchester, MA (US); Joseph C. Olson, Beverly, MA (US); Christopher A. Rowland, Rockport, MA (US); and James Buonodono, Amesbury, MA (US)
Assigned to APPLIED Materials, Inc., Santa Clara, CA (US)
Filed by APPLIED Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 8, 2019, as Appl. No. 16/535,885.
Claims priority of provisional application 62/780,729, filed on Dec. 17, 2018.
Prior Publication US 2020/0194226 A1, Jun. 18, 2020
Int. Cl. H01J 37/30 (2006.01); H01J 37/305 (2006.01); H01J 37/20 (2006.01); H01J 37/08 (2006.01)
CPC H01J 37/3053 (2013.01) [H01J 37/08 (2013.01); H01J 37/20 (2013.01); H01J 2237/0041 (2013.01); H01J 2237/0822 (2013.01); H01J 2237/20228 (2013.01); H01J 2237/3174 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system, comprising:
a substrate stage, configured to support a substrate, wherein a main surface of the substrate defines a substrate plane;
an ion source, the ion source comprising an extraction assembly, the extraction assembly oriented to direct an ion beam comprising ion flux to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane; and
a radical source, the radical source oriented to direct a radical beam comprising radical flux to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane,
wherein the substrate stage is further configured to scan the substrate along a first direction, the first direction lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane, wherein the radical flux is displaced along the first direction with respect to the ion flux at the substrate plane.