CPC C30B 29/46 (2013.01) [C30B 7/14 (2013.01); C30B 30/04 (2013.01); H01L 21/02293 (2013.01); H01L 21/02422 (2013.01)] | 18 Claims |
1. A method for forming a chalcogenide thin film, the method comprising:
forming a chalcogen element-containing film on a carrier substrate;
disposing the chalcogen element-containing film on a silicon wafer, wherein a surface of the silicon wafer and a surface of the chalcogen element-containing film are in contact with each other;
performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time; and
removing the carrier substrate,
wherein the silicon wafer has a crystal plane of (111).
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