US 11,713,508 B2
Apparatus and methods for improving chemical utilization rate in deposition process
Kevin Griffin, Livermore, CA (US); Sanjeev Baluja, Campbell, CA (US); Joseph AuBuchon, San Jose, CA (US); Mario D. Silvetti, Fountain Hills, AZ (US); and Hari Ponnekanti, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 21, 2022, as Appl. No. 17/845,191.
Application 17/845,191 is a continuation of application No. 17/129,660, filed on Dec. 21, 2020, granted, now 11,396,703.
Prior Publication US 2022/0316061 A1, Oct. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/45565 (2013.01) [C23C 16/458 (2013.01); C23C 16/45544 (2013.01); C23C 16/45589 (2013.01); C23C 16/52 (2013.01); H01J 37/3244 (2013.01); H01J 37/32431 (2013.01); H01J 37/32449 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A processing method comprising: flowing a fluid through a showerhead of a processing chamber into a process gap between the showerhead and a support surface of a substrate support to create a boundary layer having an undisrupted thickness; and disrupting the thickness of the boundary layer to create a boundary layer with a disrupted thickness by jittering the substrate support parallel to the showerhead while the fluid is flowing, wherein the undisrupted thickness of the boundary layer is in the range of 0.1 to 2 mm, and wherein the disrupted thickness of the boundary layer is greater than or equal to 10% difference relative to the undisrupted thickness.