US 11,713,507 B2
Low-k films
Shuaidi Zhang, San Jose, CA (US); Ning Li, San Jose, CA (US); and Mihaela A. Balseanu, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 15, 2022, as Appl. No. 17/840,797.
Application 17/840,797 is a division of application No. 16/897,490, filed on Jun. 10, 2020, granted, now 11,371,144.
Prior Publication US 2022/0307134 A1, Sep. 29, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 29/78 (2006.01); C23C 16/455 (2006.01); C23C 16/36 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/36 (2013.01); C23C 16/45542 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 29/78 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a substrate having an active region with at least one gate stack formed thereon, the at least one gate stack having a first side and a second side;
a source material;
a drain material; and
a spacer material on the first side and on the second side of the gate stack, the spacer material comprising one or more of a silicon oxycarbide (SiOC) film and a silicon oxycarbonitride (SiOCN) film, the silicon oxycarbide (SiOC) film and the silicon oxycarbonitride (SiOCN) film substantially free of amorphous carbon.