US 11,713,505 B2
Device and method for controlling the ceiling temperature of a CVD reactor
Peter Sebald Lauffer, Aachen (DE)
Assigned to AIXTRON SE, Herzogenrath (DE)
Appl. No. 17/250,809
Filed by AIXTRON SE, Herzogenrath (DE)
PCT Filed Sep. 3, 2019, PCT No. PCT/EP2019/073464
§ 371(c)(1), (2) Date Mar. 4, 2021,
PCT Pub. No. WO2020/048981, PCT Pub. Date Mar. 12, 2020.
Claims priority of application No. 10 2018 121 854.0 (DE), filed on Sep. 7, 2018.
Prior Publication US 2021/0310120 A1, Oct. 7, 2021
Int. Cl. C23C 16/44 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/4411 (2013.01) [C23C 16/52 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for setting up or operating a chemical vapor deposition (CVD) reactor, with which one or more layers are deposited on one or more substrates (13), wherein a susceptor (2) is heated by means of a heating device (3), heat is transported from the susceptor (2), through a process chamber (4) having a central axis (Z), to a process chamber ceiling (1), through the process chamber ceiling (1), and from the process chamber ceiling (1), through a gap space (5), to a heat dissipation body (6), the method comprising:
measuring, with temperature measuring devices (9, 9′), respective temperatures of the process chamber ceiling (1) at two or more measuring points on a surface of the process chamber ceiling (1), wherein respective azimuthal angular positions of the two or more measuring points with respect to the central axis (Z) of the process chamber (4) are different from one another, and respective radial distances (R) of the two or more measuring points from the central axis (Z) of the process chamber (4) are identical to one another.
 
12. A device, comprising:
heating device (3);
a susceptor (2) that is heated by means of the heating device (3);
a process chamber (4) having a central axis (Z), wherein the process chamber is bounded by the susceptor (2) and a process chamber ceiling (1) running parallel to the susceptor (2);
a heat dissipation body (6) that is spatially separated from the process chamber ceiling (1) by a gap space (5), wherein the gap space (5) is purged by a purge gas, wherein the heat dissipation body (6) has temperature control means (18) in order to dissipate heat generated by the heating device (3), which heat is transported through the susceptor (2), the process chamber ceiling (1), and the gap space (5), to the heat dissipation body (6); and
two or more temperature measuring devices (9, 9′) for measuring respective temperatures on a surface of the process chamber ceiling (1) at two or more measuring points, wherein respective azimuthal angular positions of the two or more measuring points about the central axis (Z) of the process chamber (4) are different from one another, and respective radial distances (R) of the two or more measuring points from the central axis (Z) are identical to one another.