US 10,367,049 B2
Electro-optical element integrating an organic electroluminescent diode and an organic transistor for modulating said diode
Benoit Racine, Renage (FR)
Assigned to INTERDIGITAL CE PATENT HOLDINGS, Paris (FR)
Appl. No. 12/84,528
Filed by Benoit Racine, Renage (FR)
PCT Filed Oct. 26, 2006, PCT No. PCT/EP2006/067797
§ 371(c)(1), (2), (4) Date Jan. 24, 2011,
PCT Pub. No. WO2007/051753, PCT Pub. Date May 10, 2007.
Claims priority of application No. 05 53348 (FR), filed on Nov. 4, 2005.
Prior Publication US 2018/0158892 A1, Jun. 7, 2018
Int. Cl. H01L 27/32 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01)
CPC H01L 27/3274 (2013.01) [H01L 27/3248 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01); H01L 51/105 (2013.01); H01L 51/0566 (2013.01); H01L 51/5012 (2013.01); H01L 51/5052 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5092 (2013.01); H01L 51/5096 (2013.01); H01L 51/5203 (2013.01); H01L 51/5253 (2013.01); H01L 51/5271 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An electrooptic element having an organic light-emitting diode and an organic semiconductor modulation transistor for modulating the organic light emitting diode (OLED), said OLED and said organic semiconductor modulation transistor being bonded to one and the same substrate,
said modulation transistor comprising:
a gate electrode disposed on the substrate;
a transparent isolating layer disposed over the gate electrode and the entire substrate;
a gap formed in a doped semiconductor material layer disposed over said transparent isolating layer, said gap forming an active zone; and
a layer of organic semiconductor material positioned over the doped semiconductor material layer and filling the gap to form the active zone, said layer of organic semiconductor material having a boss configured to separate an EL layer of the OLED to prevent colors from mixing during fabrication of an image display panel using the electrooptic elements.