CPC H10N 70/8413 (2023.02) [H10N 70/063 (2023.02); H10N 70/231 (2023.02)] | 17 Claims |
1. A memory structure comprising:
a phase change element located above a heater: and
wherein the heater comprises a conductive element surrounding a dielectric element, and
wherein the dielectric element includes an air gap.
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