US 11,711,989 B2
Phase change memory
Injo Ok, Loudonville, NY (US); Alexander Reznicek, Troy, NY (US); Soon-Cheon Seo, Glenmont, NY (US); Youngseok Kim, Upper Saddle River, NJ (US); and Timothy Mathew Philip, Albany, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Mar. 23, 2021, as Appl. No. 17/209,932.
Prior Publication US 2022/0310911 A1, Sep. 29, 2022
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8413 (2023.02) [H10N 70/063 (2023.02); H10N 70/231 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A memory structure comprising:
a phase change element located above a heater: and
wherein the heater comprises a conductive element surrounding a dielectric element, and
wherein the dielectric element includes an air gap.