US 11,711,076 B2
Power on control circuits and methods of operating the same
Po-Zeng Kang, Hsinchu (TW); Wen-Shen Chou, Hsinchu (TW); and Yung-Chow Peng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 30, 2021, as Appl. No. 17/390,043.
Claims priority of provisional application 63/182,123, filed on Apr. 30, 2021.
Prior Publication US 2022/0352887 A1, Nov. 3, 2022
Int. Cl. H02M 3/158 (2006.01); H03K 17/22 (2006.01); H03K 19/0185 (2006.01); H03K 17/687 (2006.01); H03K 19/20 (2006.01)
CPC H03K 17/6872 (2013.01) [H03K 19/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a hysteresis block configured to generate an output voltage at a disabling voltage level and at an enabling voltage level, wherein an input terminal of the hysteresis block is coupled to a control node; and
a core-voltage-gated (CVG) device coupled to the control node, wherein the CVG device is configured to receive a core voltage, the CVG device further being configured to:
alter a control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the disabling voltage level in response to the core voltage being at or below a first trigger level; and
alter the control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the enabling voltage level in response to the core voltage being at or above a second trigger level, the second trigger level being above the first trigger level; and
one or more resistive devices coupled between a power supply node and the control node, wherein a resistive value is linear and independent of the control voltage at the control node, and there are no non-linear elements between the power supply node and the control node.