US 11,710,803 B2
Compliant silicon substrates for heteroepitaxial growth by hydrogen-induced exfoliation
James Pattison, Santa Barbara, CA (US)
Assigned to RAYTHEON COMPANY, Waltham, MA (US)
Filed by RAYTHEON COMPANY, Waltham, MA (US)
Filed on Sep. 11, 2020, as Appl. No. 17/18,407.
Prior Publication US 2022/0085234 A1, Mar. 17, 2022
Int. Cl. H01L 31/18 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 21/04 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01)
CPC H01L 31/1836 (2013.01) [H01L 31/02966 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01); H01L 31/1832 (2013.01); H01L 31/1844 (2013.01); H01L 31/1852 (2013.01); H01L 21/02694 (2013.01); H01L 21/0415 (2013.01); H01L 21/2015 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
implanting dopants comprising hydrogen (H) into a silicon substrate;
performing a thermal anneal process that activates the implanted dopants, and in response to activating the implanted dopants forming a layer of ultra-thin single-crystal silicon in a portion of the silicon substrate to induce an exfoliation effect that produces a layer of single crystal silicon atop the silicon substrate and accommodates stress and strain into itself while held on top of the silicon substrate; and
performing a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon,
wherein the strain and thickness of the ultra-thin single-crystal silicon accommodate a threading dislocation into the ultra-thin single-crystal silicon, and not into the heteroepitaxially grown semiconductor material so as to reduce the threading dislocations of the heteroepitaxially grown semiconductor material.