CPC H01L 29/7816 (2013.01) [H01L 29/063 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01)] | 11 Claims |
1. A method of manufacturing a laterally diffused metal oxide semiconductor device, the method comprising:
a) forming a source region and a drain region in a base layer;
b) forming a first dielectric layer on a top surface of the base layer, wherein the first dielectric layer is adjacent to the source region;
c) forming a voltage withstanding layer between the first dielectric layer and the drain region;
d) forming a conductor layer on the first dielectric layer and the voltage withstanding layer;
e) forming a first conductor at least partially located on the first dielectric layer, a second conductor at least partially located on the voltage withstanding layer, and a plurality of third conductors that are spatially isolated and located on the voltage withstanding layer, by etching the conductor layer;
f) forming a gate electrode electrically connected to the first conductor and a first field plate electrode electrically connected to the second conductor; and
g) forming a source electrode electrically connected to the source region,
h) wherein the first and second conductors are spatially isolated, and the source electrode at least covers a space between the first and second conductors and a space between the second conductor and an adjacent one of the plurality of third conductors.
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