US 11,710,738 B2
Integrated circuit device
Keomyoung Shin, Seoul (KR); Pankwi Park, Incheon (KR); and Seunghun Lee, Hwaseong (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 21, 2021, as Appl. No. 17/352,763.
Application 17/352,763 is a continuation of application No. 16/694,706, filed on Nov. 25, 2019, granted, now 11,069,681.
Claims priority of application No. 10-2019-0055843 (KR), filed on May 13, 2019.
Prior Publication US 2021/0313322 A1, Oct. 7, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/088 (2006.01); H01L 29/26 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/26 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a fin-type active region extending lengthwise in a first direction;
a plurality of nanosheets overlapping each other in a second direction on the fin-type active region, each of the plurality of nanosheets comprising a compound semiconductor layer; and
a source/drain region on the fin-type active region,
wherein the plurality of nanosheets comprises a first nanosheet, which is closest to the fin-type active region, the first nanosheet having a shortest length in the first direction from among the plurality of nanosheets, and
wherein a composition of the compound semiconductor layer in the first nanosheet is different from a composition of the compound semiconductor layer in others of the plurality of nanosheets.