US 11,710,533 B2
NAND flash array defect real time detection
Xiaojiang Guo, San Jose, CA (US); Jung Sheng Hoei, Newark, CA (US); Michele Piccardi, Cupertino, CA (US); and Manan Tripathi, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 27, 2022, as Appl. No. 17/874,501.
Application 17/874,501 is a continuation of application No. 16/887,516, filed on May 29, 2020, granted, now 11,437,117.
Prior Publication US 2022/0367000 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 29/50 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01)
CPC G11C 29/50004 (2013.01) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 2029/5004 (2013.01); G11C 2029/5006 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory array including memory cells;
a word line driver circuit including:
a charge pump circuit configured to generate a program voltage target to be applied to a word line to program a memory cell of the memory array, wherein the charge pump circuit receives a charge pump clock to activate the charge pump; and
a control loop to activate the charge pump circuit using a control signal according to a comparison of a pump circuit output voltage to the program voltage target;
a sensor circuit configured to compare a rate that the charge is active for a specified window of time that starts after the charge pump circuit output reaches the program voltage target, and provide an indication of current generated by the charge pump circuit according to the rate;
a first counter to time the window of time, and a second counter to count the number of charge pump clocks that occur during the window of time; and
logic circuitry configured to determine when the current generated by the charge pump circuit is greater than a specified threshold current when the second counter exceeds a threshold count during the window of time of the first counter, and generate a fault indication according to the determination.