US 11,710,512 B2
Method for writing to and reading out a non-volatile electronic memory
Julian Schwarz, Tuebingen (DE); Christoph Puttmann, Kusterdingen (DE); and Jens Goldeck, Reutlingen (DE)
Assigned to ROBERT BOSCH GMBH, Stuttgart (DE)
Filed by Robert Bosch GmbH, Stuttgart (DE)
Filed on Mar. 30, 2022, as Appl. No. 17/708,163.
Claims priority of application No. 10 2021 203 507.8 (DE), filed on Apr. 9, 2021.
Prior Publication US 2022/0328080 A1, Oct. 13, 2022
Int. Cl. G11C 7/10 (2006.01)
CPC G11C 7/1096 (2013.01) [G11C 7/1063 (2013.01); G11C 7/1069 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for writing to a non-volatile electronic memory with data words and assigned pieces of index information, the method comprising:
initially filling the non-volatile electronic memory exclusively with empty data frames, the empty data frames being overwritable with multi-data frames and/or individual data frames, wherein each multi-data frame includes a selectable number of sequentially stored data words and a multi-data frame header, a frame-type marker, a number of data words, and a selectable start index, being stored in the multi-data frame header in such a way that each data word of the sequentially stored data words is assignable a unique index value from an index interval by incrementing or decrementing, and the index interval being defined by the number of data words and by the start index, wherein each individual data frame includes one data word and an individual data frame header, a frame-type marker and a selectable index value for the one data word of the individual data frame being stored in the individual data frame header;
sequentially overwriting the empty data frames; and
writing at least one portion of the data words to be stored and assigned pieces of index information into at least one multi-data frame, the number of the data words and the start index for the data words of the multi-data frame being individually selected and being written into the multi-data frame header.