US 11,709,985 B2
Semiconductor device including standard cells with combined active region
Ta-Pen Guo, Taipei (TW); and Guru Prasad, Austin, TX (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Oct. 19, 2020, as Appl. No. 17/74,450.
Claims priority of provisional application 62/964,296, filed on Jan. 22, 2020.
Prior Publication US 2021/0224458 A1, Jul. 22, 2021
Int. Cl. G06F 30/39 (2020.01); G06F 30/392 (2020.01); H01L 23/50 (2006.01); G03F 1/70 (2012.01)
CPC G06F 30/392 (2020.01) [G03F 1/70 (2013.01); H01L 23/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first power rail and a second power rail extending in a row direction;
a third power rail extending in the row direction between the first and second power rails;
a first cell arranged between the first power rail and the second power rail, wherein a cell height of the first cell in a column direction perpendicular to the row direction is equal to a pitch between the first power rail and the second power rail;
a second cell arranged between the first power rail and the third power rail, wherein a cell height of the second cell in the column direction is equal to a pitch between the first power rail and the third power rail; and
a dummy fin structure disposed adjacent to the first cell and the second cell, the dummy fin structure extending in the row direction and overlapped with the third power rail, wherein the dummy fin structure is configured as a non-functional device,
wherein a first active region of the first cell includes a first width in the column direction greater than a second width, in the column direction, of a second active region in the second cell.