US 11,709,616 B2
Adjusting a preprogram voltage based on use of a memory device
Priya Venkataraman, Boise, ID (US); Pitamber Shukla, Boise, ID (US); Scott A. Stoller, Boise, ID (US); Giuseppina Puzzilli, Boise, ID (US); and Niccolo′ Righetti, Boise, ID (US)
Assigned to MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 18, 2022, as Appl. No. 17/890,885.
Application 17/890,885 is a continuation of application No. 17/127,373, filed on Dec. 18, 2020, granted, now 11,461,035.
Prior Publication US 2022/0391125 A1, Dec. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0652 (2013.01) [G06F 3/0625 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
determining a number of program and erase cycles for a portion of memory of a memory device;
determining a preprogram voltage value using the number of program and erase cycles, wherein the preprogram voltage value decreases from a default preprogram voltage value as the number of program and erase cycles increases;
applying a preprogram voltage to the portion of memory, the preprogram voltage set using the determined preprogram voltage value; and
performing an erase operation on the portion of memory following the application of the preprogram voltage.