CPC G06F 3/0652 (2013.01) [G06F 3/0625 (2013.01); G06F 3/0679 (2013.01)] | 20 Claims |
1. A method comprising:
determining a number of program and erase cycles for a portion of memory of a memory device;
determining a preprogram voltage value using the number of program and erase cycles, wherein the preprogram voltage value decreases from a default preprogram voltage value as the number of program and erase cycles increases;
applying a preprogram voltage to the portion of memory, the preprogram voltage set using the determined preprogram voltage value; and
performing an erase operation on the portion of memory following the application of the preprogram voltage.
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