US 11,709,196 B2
Method and apparatus for detecting circuit defects
Donggyu Minn, Suwon-si (KR); Daehyun Kang, Suwon-si (KR); Yonghoon Kim, Suwon-si (KR); Jihoon Kim, Suwon-si (KR); Hyundo Ryu, Suwon-si (KR); Jeeho Park, Suwon-si (KR); Sunggi Yang, Suwon-si (KR); Youngchang Yoon, Suwon-si (KR); and Sehyug Jeon, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 16, 2021, as Appl. No. 17/378,592.
Claims priority of application No. 10-2020-0088023 (KR), filed on Jul. 16, 2020.
Prior Publication US 2022/0018892 A1, Jan. 20, 2022
Int. Cl. G01R 31/28 (2006.01); G01R 31/3167 (2006.01); G01R 27/32 (2006.01)
CPC G01R 31/2822 (2013.01) [G01R 27/32 (2013.01); G01R 31/3167 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method by a test apparatus for testing a radio frequency (RF) circuit, the method comprising:
controlling a test circuit of the RF circuit to generate a DC current and identifying a reference resistance by measuring a potential difference between a first end and a second end of a reference resistor;
determining a first drain source current of a transistor circuit based on the reference resistance and a first drain voltage of the transistor circuit, being applied by the test circuit;
determining a second drain source current of the transistor circuit based on the reference resistance and a second drain voltage of the transistor circuit, being applied by the test circuit;
identifying a drain resistance based on the first drain voltage, the second drain voltage, the first drain source current, and the second drain source current; and
performing a test of the RF circuit based on the drain resistance, the first drain source current, and a first threshold value.