US 11,708,644 B2
Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom
Jong Hwi Park, Suwon-si (KR); Myung-Ok Kyun, Suwon-si (KR); Jongmin Shim, Hwaseong-si (KR); Byung Kyu Jang, Suwon-si (KR); Jung Woo Choi, Suwon-si (KR); Sang Ki Ko, Suwon-si (KR); Kap-Ryeol Ku, Suwon-si (KR); and Jung-Gyu Kim, Suwon-si (KR)
Assigned to SENIC INC., Cheonan-si (KR)
Filed by SENIC INC., Cheonan-si (KR)
Filed on Jun. 30, 2020, as Appl. No. 16/917,541.
Claims priority of application No. 10-2019-0135346 (KR), filed on Oct. 29, 2019.
Prior Publication US 2021/0123160 A1, Apr. 29, 2021
Int. Cl. C30B 29/36 (2006.01); B24B 7/22 (2006.01); B28D 5/00 (2006.01); C30B 23/02 (2006.01); C01B 32/956 (2017.01); B28D 5/02 (2006.01); B28D 5/04 (2006.01); H01L 29/16 (2006.01)
CPC C30B 29/36 (2013.01) [B24B 7/228 (2013.01); B28D 5/00 (2013.01); C01B 32/956 (2017.08); C30B 23/02 (2013.01); B28D 5/022 (2013.01); B28D 5/045 (2013.01); H01L 29/1608 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A SiC wafer comprising:
a plurality of measuring points distributed on a surface of the wafer at regular intervals of 10 mm or less; and
a target area on the surface of the wafer inside of a circle having a radius of 70% of a radius of the wafer;
wherein the plurality of measuring points are within the target area,
wherein a rocking curve of the plurality of measuring points has a peak and a full width at half maximum,
wherein an average value of an omega angle is an average of omega angles of the peaks of the plurality of measuring points,
wherein the full width at half maximum is a value based on the average value of the omega angle, and
wherein more than 95% of the plurality of measuring points have the full width at half maximum of −1.5 to 1.5 degree.