US 11,708,633 B2
Metal chalcogenide film and method and device for manufacturing the same
Kyung-Eun Byun, Seongnam-si (KR); Hyoungsub Kim, Seoul (KR); Taejin Park, Yongin-si (KR); Hyeonjin Shin, Suwon-si (KR); Hoijoon Kim, Daejeon (KR); Wonsik Ahn, Bucheon-si (KR); and Mirine Leem, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed on Apr. 29, 2020, as Appl. No. 16/861,614.
Claims priority of application No. 10-2019-0051818 (KR), filed on May 2, 2019.
Prior Publication US 2020/0347494 A1, Nov. 5, 2020
Int. Cl. C23C 16/30 (2006.01); B22F 7/00 (2006.01); C23C 16/46 (2006.01); C23C 16/448 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 31/032 (2006.01)
CPC C23C 16/305 (2013.01) [B22F 7/008 (2013.01); C23C 16/448 (2013.01); C23C 16/45502 (2013.01); C23C 16/45514 (2013.01); C23C 16/46 (2013.01); H01L 21/02568 (2013.01); H01L 21/02581 (2013.01); H01L 21/28568 (2013.01); H01L 31/0324 (2013.01); B22F 2207/01 (2013.01); B22F 2302/45 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A metal chalcogenide thin film comprising:
a transition metal element; and
a chalcogen element, wherein at least one of the transition metal element and the chalcogen element has a composition gradient along a surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient, a thickness of the metal chalcogenide thin film continuously decreases with the composition gradient.