US 11,706,927 B2
Memory devices and methods of forming memory devices
Giorgio Servalli, Fara Gera d'Adda (IT); and Marcello Mariani, Milan (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 2, 2021, as Appl. No. 17/189,594.
Prior Publication US 2022/0285392 A1, Sep. 8, 2022
Int. Cl. H01L 27/11514 (2017.01); H10B 51/20 (2023.01); H10B 51/10 (2023.01); H10B 53/10 (2023.01); H10B 53/20 (2023.01); H01L 27/11597 (2017.01); H01L 27/11587 (2017.01); H01L 27/11504 (2017.01)
CPC H10B 51/20 (2023.02) [H10B 51/10 (2023.02); H10B 53/10 (2023.02); H10B 53/20 (2023.02)] 35 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a first memory cell comprising a first pillar of a semiconductor material; the first pillar comprising a first upper source/drain region and a first channel region under the first upper source/drain region;
a second memory cell comprising a second pillar of the semiconductor material; the second pillar comprising a second upper source/drain region and a second channel region under the second upper source/drain region;
a gating structure passing along the first channel region and the second channel region and comprising regions proximate the first channel region and the second channel region, the gating structure extending along a first direction;
an insulative structure over regions of the first pillar and the second pillar, the insulative structure extending along a second direction which is orthogonal to the first direction;
a first bottom electrode electrically coupled with the first upper source/drain region, and a second bottom electrode electrically coupled with the second upper source/drain region; the first bottom electrode and the second bottom electrode being configured as a first angle plate and a second angle plate, respectively; the second angle plate being a mirror image of the first angle plate; the first angle plate and the second angle plate having horizontal segments adjacent to the first upper source/drain region and the second upper source/drain region, respectively; and having vertical segments extending upwardly from the horizontal segments; the vertical segments of the first angle plate and the second angle plate being adjacent to lateral sides of the insulative structure;
ferroelectric-insulative-material over the first bottom electrode and the second bottom electrode;
top-electrode-material over the ferroelectric-insulative-material; and
a slit passing through the top-electrode-material and extending along the second direction; the slit being directly over the insulative structure.