CPC H10B 43/27 (2023.02) [H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/3115 (2013.01); H01L 21/31111 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02)] | 10 Claims |
1. A method of forming an integrated assembly, comprising:
forming a stack of alternating first and second levels; the first levels comprising first material having a first primary composition, and the second levels comprising second material having a second primary composition; at least one of the first levels being compositionally different relative to others of the first levels due to said at least one of the first levels comprising first dopant dispersed within the first primary composition; at least one of the second levels being compositionally different relative to others of the second levels due to said at least one of the second levels comprising second dopant dispersed within the second primary composition;
forming an opening to extend through the first and second levels of the stack;
forming charge-storage material, tunneling material and channel material within the opening;
removing the second material to leave voids between the first levels; and
forming conductive structures within the voids.
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