CPC H10B 43/27 (2023.02) [H01L 23/5226 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] | 15 Claims |
1. A vertical memory device, comprising:
first horizontal gate electrodes disposed on a substrate and spaced apart from each other in a first direction that is substantially perpendicular to an upper surface of the substrate, wherein each of the first horizontal gate electrodes extends in a second direction that is substantially parallel to the upper surface of the substrate;
a vertical channel extending through the first horizontal gate electrodes in the first direction;
a charge storage structure disposed between the vertical channel and each of the first horizontal gate electrodes;
a first vertical gate electrode extending through the first horizontal gate electrodes in the first direction, the first vertical gate electrode is electrically insulated from the first horizontal gate electrodes; and
a first horizontal channel disposed at a portion of each of the first horizontal gate electrodes adjacent, in a horizontal direction substantially parallel to the upper surface of the substrate, to a sidewall of the first vertical gate electrode.
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