US 11,706,919 B2
Vertical memory devices
Seokcheon Baek, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 30, 2020, as Appl. No. 17/38,945.
Claims priority of application No. 10-2020-0021414 (KR), filed on Feb. 21, 2020.
Prior Publication US 2021/0265390 A1, Aug. 26, 2021
Int. Cl. H10B 43/27 (2023.01); H01L 23/522 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 23/5226 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A vertical memory device, comprising:
first horizontal gate electrodes disposed on a substrate and spaced apart from each other in a first direction that is substantially perpendicular to an upper surface of the substrate, wherein each of the first horizontal gate electrodes extends in a second direction that is substantially parallel to the upper surface of the substrate;
a vertical channel extending through the first horizontal gate electrodes in the first direction;
a charge storage structure disposed between the vertical channel and each of the first horizontal gate electrodes;
a first vertical gate electrode extending through the first horizontal gate electrodes in the first direction, the first vertical gate electrode is electrically insulated from the first horizontal gate electrodes; and
a first horizontal channel disposed at a portion of each of the first horizontal gate electrodes adjacent, in a horizontal direction substantially parallel to the upper surface of the substrate, to a sidewall of the first vertical gate electrode.